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2N5304 (SILICON)
RADIATION-R ESISTANT
NPN SI LICON POWER TRANSISTOR designed for high·speed switching and wide· band amplifier ap-
plications in radiation environments.
• Coliector·Emitter Sustaining Voltage VCEO(sus} = 40 Vdc (Min) @IC = 100 mAde
• DC Current Gain hFE = 30·120@ IC = 2.0 Adc = 25 (Min) @IC = 5.0 Adc = 12 (Min) @IC = 10 Adc
• Coliector·Emitter Saturation Voltage VCE(sat} = 0.4 Vdc (Max) @IC = 2.0 Adc = 0.8 Vdc (Max) @IC = 5.0 Adc = 1.2 Vdc (Max) @IC= 10 Adc
• Current·Gain - Bandwidth ProductfT = 100 MHz (Min) @IC = 0.5 Adc
• Collector Cutoff Current, DC Current Gai nand Collector·Emitter Saturation Voltage Limits Guaranteed After Exposure to 1 x 1014 Fast N e u t r o n / c m 2.
2N5304 Datasheet
