2N5304 Datasheet | Unknown Manufacturer

2N5304 (SILICON) RADIATION-R ESISTANT NPN SI LICON POWER TRANSISTOR designed for high- speed switching and wide- band amplifier ap- plications in radiation environments. - Coliector- Emitter Sustaining Voltage VCEO(sus} = 40 Vdc (Min) @IC = 100 m Ade - DC Current Gain h FE = 30- 120@ IC = 2.0 Adc = 25 (Min) @IC = 5.0 Adc = 12 (Min) @IC = 10 Adc - Coliector- Emitter Saturation Voltage VCE(sat} = 0.4 Vdc (Max) @IC = 2.0 Adc = 0.8 Vdc (Max) @IC = 5.0 Adc = 1.2 Vdc (Max) @IC= 10 Adc - Current- Gain - Bandwidth Productf T = 100 MHz (Min) @IC = 0.5 Adc - Collector Cutoff Current, DC Current Gai nand Collector- Emitter Saturation Voltage Limits Guaranteed After Exposure to 1 x 1014 Fast N e u t r o n / c m 2. GUARANTEED RADIATION RESISTANCE CAPABILITIES > After 1 x 1014 n/cm2 Fast Neutron!E 10 ke Y) Exposure (FISSion Spectrum) C h l i r a c e. . . Sl IC DC Current Garn (Ie = 2 o Adc, Vce" 20 Vde) Collector Cutoff,Current (VCE = 45 Vde, VES/off) .. 1 5 Vde Coliectof- Emltter Saturation vortage He"2 0 Adc, IS" 04 Adc) Symbol Min h FE 5.0 'CEX VCE/sad MAXIMUM RATINGS Rating Cotlector-Base Voltage Coliector- Emitter Voltage Emitter-Base Voltage Collector Current Contmuous Base Current Total Device Dlssipatlon@TC" 12So C Derate above 125°C Operating and Storage Junction Temperature Ranae Fast Neutron Rachatlon Lllvel THERMAL CHARACTERISTICS Thermal Resistance, Junct IOn to case Symbol Ve EO Po Symbol - 1ndlcates JEOEC Registered Data Mox 50 1.5 50 40 6.0 10 2.0 25 0333 -65 to +200 Mo. 3. FIGURE 1 - POWER DERATING " I'.. -...