Unknown Manufacturer 2N5329
Medium-power NPN silicon transistors
| Part No. | 2N5329 |
|---|---|
| Datasheet | 2N5329 Download |
| Manufacturer | Unknown Manufacturer |
| Description | Medium-power NPN silicon transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating. and Storage Junction Temperature Range VCEO VCB VEB IC IB PD TJ' Tstg THERMAL CHARACTERISTICS Characteristic Symb91 Thermal ReSistance, Junction to Case () JC 2N5336 2N5337 80 2N5338 2N5339 100 80 100 6.0 5.0 1.0 6.0 34.3 -65 to +200 Unit Vdc Vdc Vdc Adc Adc Watts mWrC °c Max Unit 29.2 °C/W FIGURE 1 - POWER-TEMPERATURE DERATING CURVE 6.0 ~ 5.0 !;( ;: :; 4.0 o e~n 3.0 'C"i a: 3 2.0 o Q. ci Q. 1.0 o o ~ "" ~ ~ "'- ~........ ~ ~ "'"'~ 20 40 60 80 100 120 140 160 180 200 TC. CASE TEMPERATURE (DC) Safe Area Curves are indicated by Figure 5. All limits are a
