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2N5329 - Medium-power NPN silicon transistors

This page provides the datasheet information for the 2N5329, a member of the 2N5326 Medium-power NPN silicon transistors family.

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Datasheet Details

Part number 2N5329
Manufacturer ETC
File Size 350.86 KB
Description Medium-power NPN silicon transistors
Datasheet download datasheet 2N5329 Datasheet
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Full PDF Text Transcription

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2N5336 (SILICON) thru 2N5339 Medium-power NPN silicon transistors designed for switching and wide band amplifier applications. CASE 79 (TO·39) 02 1 00 STYLE 1: 3 PIN 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating. and Storage Junction Temperature Range VCEO VCB VEB IC IB PD TJ' Tstg THERMAL CHARACTERISTICS Characteristic Symb91 Thermal ReSistance, Junction to Case () JC 2N5336 2N5337 80 2N5338 2N5339 100 80 100 6.0 5.0 1.0 6.0 34.3 -65 to +200 Unit Vdc Vdc Vdc Adc Adc Watts mWrC °c Max Unit 29.2 °C/W FIGURE 1 - POWER-TEMPERATURE DERATING CURVE 6.0 ~ 5.0 !;( ;: :; 4.
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