Datasheet Summary
53462N (SILICON) thru
MEDIUM-POWER NPN SILICON TRANSISTORS
- .. designed for switching and wide-band amplifier applications.
- Low Collector-Emitter Saturation Voltage
- VCE(sat) = 1.2 Vdc (Max) @ IC = 7.0 Adc
- DC Current Gain Specified to 5 Amperes
- Excellent Safe Operating Area
- Packaged in the pact, High Dissipation TO-59 Case
- Isolated Collector Configuration
'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Base CUrrent
Total Device Dissipation@ TC = 25'C Derate above 25°C
Operating and storage Junction Temperature Range
Symbol
VCEO VCB VEB IC IB PD
TJ- Tstg
2NS346 2NS347
2NS348...
