Unknown Manufacturer 2N5362
Silicon N-channel junction field-effect transistors
| Part No. | 2N5362 |
|---|---|
| Datasheet | 2N5362 Download |
| Manufacturer | Unknown Manufacturer |
| Description | Silicon N-channel junction field-effect transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Device Dissipation @TA =25° C Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol IG(f) VGS(r) VDG PD Tstg TJ Value Unit 10 mAdc 40 Vdc 40 Vdc 300 2.0 -65 to +200 mW mW/oC °c -65 to +175 °cELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherWise noted) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 10 JiAde, Vns = 0) Gate-Source Cutoff Voltage (Vns = 15 Vde, ~ = 100 nAdc) Gate Reverse Current (VGS = 20 Vde, Vns =0) (VGS = 20 Vde, Vns =0, TA =150°C) 2N5358 2N5359 2N5360 2N5361 2N5362 2N5363 2N5364 Symbol Min Max Unit V(BR)GSS 40 - Vde VGS(off) IGSS 0.5 3.0
