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2N5435 (GERMANIUM)
thru
2N5440
PNP germanium power switching transistors designed for high-current, fast-switching applications requiring low saturation voltage and excellent safe operating area.
L~'
te
SEATING
D
K j
~
PLANE
r--- F--
CASE 3·04
t--J-
Q~V ~
I
Ht
"
~ot, ~l.----/--{~f/
MILLIMETERS DIM MIN MAX
1 A - 39.37
I B - 21.08
I i C - 9.14
-0 1.52 1.6
GE
3.43
INCHES
MIN MA
-
-
IS'"' 0.830
o.m
- 01
F 29.90 30.40 1.177 1.197
STYLE 1: PIN 1. BASE 2. EMITTER
G 10.67 11.18 0.420 0.440 H 5.33 5.59 0.210 O. 20 J 16.64 17.15 0,655 0.675 K 15.49 18.03 0.610 0.710
CASE. CO LLECTO R
Q 3.84 4.09 0.151 0.161
R - 26.67
1.050
~)LiF e-=1•
pLCASE 161
te:.J" D
U SEATING
A
~1
L IMETERS IN H
DIM MIN
X MIN
X
-F-
L_J-
Q~·V)l-~-t-~-~A -
B C D E
39.37 21.08 9.14 3.56
.