2N5556 Datasheet | Unknown Manufacturer

2N5556 (SILICON) thru 2N5558 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (Type A) devices designed for low-noise amplifier appl ications_ - Low Noise Figure - NF =1.0 d B (Max) @ 100 Hz - Low Gate Leakage Current - IGSS = 0.1 n Adc (Max) - Low Input Capacitance - Ciss = 6.0 p F (Max) SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS TYPE A MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Deviee Dissipation @TA = 25'C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG(f) PD TJ Tstg Value Unit 30 Vdc 30 Vdc 30 Vdc 10 m Ade 300 2.0 . m W m W/"C -65 to +175 - c -65 to...