Datasheet4U.com

2N5556 Datasheet PDF

Unknown Manufacturer 2N5556

SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

Part No. 2N5556
Datasheet 2N5556 Download
Manufacturer Unknown Manufacturer
Description SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Buy Stock & Price
2N5556 datasheet page 1 preview

MAXIMUM RATINGS

Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Deviee Dissipation @TA = 25'C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG(f) PD TJ Tstg Value Unit 30 Vdc 30 Vdc 30 Vdc 10 mAde 300 2.0 . mW mW/"C -65 to +175
●c -65 to +200
●C FIGURE 1 - EQUIVALENT LOW FREQUENCY CIRCUIT ~~r-OS~----C-gdC-dS-'----IY-~-IV-i~------~ Vis= jw Giss Vos = 1/ross + jw Coss YI, =[YIsI Yrs= -jw Crss Ciss = Cgd + Cgs Crs, =Cgd Coss = Cgd + Cds 2-184 STYLE 1 PIN 1. 2. 3. 4. DIM A F G H J K1 L M N P All JEDEC dimension
2N5556 page 2 preview