2N5635
2N5635 is NPN SILICON RF POWER TRANSISTORS manufactured by Unknown Manufacturer.
2N5635 (SILICON) 2N5636 2N5637
NPN SILICON RF POWER TRANSISTORS
- .. designed for VHF/UHF amplifier applications. These devices are suitable for use in 28 volt systems to 470 MHz. These transistors are ideal for 225- 400 MHz munications equipment.
- Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch.
- Low inductance strip line packaging for easier and better broad- band designs.
- Ceramic Package
- Choice of Power Levels at 400 MHz. 28 Vdc 2N5635
- 2.5 Watts
- 6.2 d B (Min) Gain 2N5636
- 7.5 Watts
- 5.7 d B (Min) Gain 2N5637
- 20 Watts
- 4.6 d B (Min) Gain
- MAXIMUM RATINGS Rating
Collector-Emitter Voltage Coliector- Ba.. Voltage Emitter-Base Voltage Collector Current Total Device Dissipationflll TC =250 C
Derate above 25°C Operating and Storage Junction
Temperatura Range
-Indicatel JEOEC Registered Oate.
Symbol
VCEO VCB VEB IC
Po
TJ.Tstg
2N5636i 2N5636i...
