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2N5637 - NPN SILICON RF POWER TRANSISTORS

Download the 2N5637 datasheet PDF. This datasheet also covers the 2N5635 variant, as both devices belong to the same npn silicon rf power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5635-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5637
Manufacturer Unknown Manufacturer
File Size 445.47 KB
Description NPN SILICON RF POWER TRANSISTORS
Datasheet download datasheet 2N5637 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5635 (SILICON) 2N5636 2N5637 NPN SILICON RF POWER TRANSISTORS · .. designed for VHF/UHF amplifier applications. These devices are suitable for use in 28 volt systems to 470 MHz. These transistors are ideal for 225·400 MHz communications equipment. • Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. • Low inductance strip line packaging for easier and better broad· band designs. • Ceramic Package • Choice of Power Levels at 400 MHz. 28 Vdc 2N5635 - 2.5 Watts - 6.2 dB (Min) Gain 2N5636 - 7.5 Watts - 5.7 dB (Min) Gain 2N5637 - 20 Watts - 4.6 dB (Min) Gain *MAXIMUM RATINGS Rating Collector-Emitter Voltage Coliector·Ba..