Datasheet Summary
2N5641 (SILICON) 2N5642 2N5643
NPN SILICON RF POWER TRANSISTORS
. designed for VH F power amplifier or oscillator applications in military and industrial equipment. These devices are particularly suited for use in Class AB, B, or C amplifier applications to 400 MHz.
- Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch.
- Stripline packaging for lower lead inductance and better broad- band capability.
- Ceramic Packaging
- Specified 2B Volt, 175 MHz Characteristics2N5641
- 7.0 Watts Output Power at B.4 dB Gain 2N5642
- 20 Watts Output Power at 8.2 dB Gain 2N5643
- 40 Watts Output...
