Datasheet Summary
2N5668 (SILICON) 2N5669 2N5670
SILICON N- CHANNEL JUNCTION FIELD- EFFECT TRANSISTORS
Depletion Mode (TypeA) Junction Field-EffectTransistors designed for VHF amplifier and mixer applications.
- Low Cross Modulation and Intermodulation Distortion
- Drain and Source Interchangeable
- Low 100-MHz Noise Figure
- NF = 2.5 dB (Max)
- Low Reverse Transfer and Input Capcitances-
Crss = 1.0 pF (Typ); Ciss =4.7 pF (Typ)
- High Maximum Stable Gain Due to Drain and Gate Lead Separation
N- CHANNEL JUNCTION FIELD- EFFECT
TRANSISTORS
(Type A)
- MAXIMUM RATINGS
Rating Drain-Source Voltage
- Drain-Gate Voltage
- Reverse Gate-SOu~ce Voltage
- Forward Gate Current
Drain Current
- Total Device Dissipation@TA = 250...
