Unknown Manufacturer 2N5669
SILICON N-CHANNEL JUNCTION FET
MAXIMUM RATINGS
Rating Drain-Source Voltage●Drain-Gate Voltage *Reverse Gate-SOu~ce Voltage
●Forward Gate Current Drain Current *Total Device Dissipation@TA = 250 C Derate above 2SoC
●Storage Temperature Range Svmbol VOS VOG VGSR IGF 10 Po '" Tstg III Value 25 25 25 10 20 310 2.82 -65 to +150 Unit Vde Vdc Vdc mAde mAde mW mW/oC °c -Indicates JEDEC Registered Data. (11 Continuous package improvements have enhanced these guaranteed Maximum