2N5716 Datasheet | Unknown Manufacturer

2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N- CHANNEL JUNCTION FIELD- EFFECT TRANSISTORS Depletion Mode Junction Field- Effect Transistors designed for audio amplifiers in low- power or battery operated applications. - Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/l Adc to 250 /l Ade - 2N5716 200 /l Ade to 1.0 m Ade - 2N5717 800 /l Ade to 4.0 m Ade - 2N 5718 I- High Forward Transadmittance @ VDS = 15 Vdc, f = 1.0 k Hz Vls= 350 /lmhos (Typ) @ ID = 50 /l Ade - 2N5716 550/lmhos (Typ) @ ID = 200/l Adc - 2N5717 900/lmhos (Typ) @ ID = 800 /l Ade - 2N5718 - Low Noise Voltage - en = 75 n VIj""HZ (Max) @ f = 1.0 k Hz - Drain and Source Interchangeable LOW NOISE N- CHANNEL JUNCTION FIELD- EFFECT TRANSISTORS en = 75 n V/.JHz 'MAXIMUM RATINGS Rating Drai n~Gate Vol tage Reverse Gate-Source Voltage Forward Gate Current, Total Power Dissipation @ TA = 25°C Derate above 2So C Operating Channel Temperature Storage Temperature Range Symbol VOG VGSR Po Tehannel Tstg Value 40...