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2N5859 (SILICON)
NPN SILICON ANNULAR SWITCHING TRANSISTOR
... designed for high·current, !ligh·speed switching applications. Ideally suited for ferrite core and plated wire memory driver, hammer driver, or MOS translator applications.
• Excellent Current·Gain - Bandwidth Product fT = 250 MHz (Min) @IC = 50 mAde
• Low Collector·Base Capacitance -
Ccb =7.0 pF (Max) @VCB = 10 Vdc
• Low Coliector·Emitter Saturation Voltage VCE(sat) = 0.7 Vdc (Max) @ IC = 1.0 Adc
• Fast Switching Times @ IC = 1.
2N5859 Datasheet
