Datasheet Summary
2N5859 (SILICON)
NPN SILICON ANNULAR SWITCHING TRANSISTOR
... designed for high- current, !ligh- speed switching applications. Ideally suited for ferrite core and plated wire memory driver, hammer driver, or MOS translator applications.
- Excellent Current- Gain
- Bandwidth Product fT = 250 MHz (Min) @IC = 50 mAde
- Low Collector- Base Capacitance
- Ccb =7.0 pF (Max) @VCB = 10 Vdc
- Low Coliector- Emitter Saturation Voltage VCE(sat) = 0.7 Vdc (Max) @ IC = 1.0 Adc
- Fast Switching Times @ IC = 1.0 Adc ton = 35 ns (Max) toff = 60 ns (Max)
NPN SILICON SWITCHING TRANSISTOR
"MAXIMUM RATINGS Rating
Coliector~Emitter Voltage
Collector-Base Voltage Emitter- Base Voltage
Collector Current
- Continuous...