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2N5981 - HIGH POWER PNP SILICON TRANSISTORS

This page provides the datasheet information for the 2N5981, a member of the 2N5980 HIGH POWER PNP SILICON TRANSISTORS family.

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Datasheet Details

Part number 2N5981
Manufacturer ETC
File Size 324.25 KB
Description HIGH POWER PNP SILICON TRANSISTORS
Datasheet download datasheet 2N5981 Datasheet
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Full PDF Text Transcription

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2N5980 2N59812N5982(SILICON) MJE5980 MJE5981 MJE5982 HIGH POWER PNP SILICON TRANSISTORS designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 8 Amperes hFE = 20-120@ IC = 4.0 Adc = 7.0 (Min) @ IC = 8.0 Adc • Collector-Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - 2N5980, MJE5980 = 60 Vdc (Min) - 2N5981, MJE5981 = 80 Vdc (Min) - 2N5982, MJE5982 • High Current Gain - 8andwidth Product - fT = 2.
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