The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N6136 (SILICON)
The RF Lin.e
NPN SILICON RF POWER TRANSISTOR
· ..designed for 12.5 Volt UHF large'signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
• Specified 12.5 Volt, 470 MHz Characteristics Output Power = 25 Watts
Minimum Gain = 4.0 dB
Efficiency = 65% • Overlay Construction Provides Protection Against Device Damage
Due to Load Mismatch • Characterized With Series Equivalent Large-Signal Impedance
Parameters
25W-470MHz RF POWER
TRANSISTOR NPN SILICON
"MAXIMUM RATINGS
Rating Collector~Emitter Voltage Coliector~Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Oevice Dissipation@Te=25oe (21
Derate above' 2~oC Storage Temperature Range Stud Torque 111
Symbol VeEO VeBO VEBO
Ie
Po
Tstg
-
Value 18 36 4.0 6.0 60
0.