2N6411
2N6410 NPN (SILICON) 2N6411 PNP
PLEMENTARY SILICON ANNULAR POWER PLASTIC TRANSISTORS
.. designed for low voltage. low- power. high- gain audio amplifier applications.
- Collector- Emitter Sustaining Voltage
- VCEO(sus) = 25 Vdc (Min) @ IC = 10 m Adc
- High DC Current Gain
- h FE = 70 (Min) @ IC = 500 m Adc
= 45 (Min) @ IC = 2.0 Adc
= 10 (Min) @ IC = 4.0 Adc
- Low Collector- Emitter Saturation Voltage VCE(sat) = 0.35 Vdc (Max) @ IC = 500 m Adc = 0.8 Vdc (Max) @ IC = 2.0 Adc
- High Current- Gain
- Bandwidth Product
- tr = 50 MHz (Min) @ IC = 100 m Adc
- Pin patible with TO- 220AB Package
'MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cu rrent
- Continuous
Peak Base Current Total Power Dissipation @TC':: 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Case
- Indicates JEDEC Registered Data.
Symbol VCEO VCBO VEB
IB...
