2N6412
2N6412,2N6413 NPN (SILICON) 2N6414,2N6415 PNP
PLEMENTARY PLASTIC SILICON ANNULAR POWER TRANSISTORS
- .. designed for low power audio amplifier and low current, high- speed switching applications.
- Low Co l Iectdt- Emitter Sustaining Voltage ~
VCEO(sus) = 40 Vdc (Min)
- 21116412, 21116414
. '= 60 Vdc (Min)
- 21116413, 21116415
- High Current- Gain
- Bandwidth Product f T = 50 MHz (Min) @ IC = 100 m Adc
- DC Current Gain Specified at 0.2, 1.0, 2.0 and 4.0 Adc
- Collector- Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc
- Pin patible With TO- 220AB Package
"MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
~ Peak
Ve EO Ve BO VEBO
Ie
Base Current Total Power Dissipation@Tc
Derate Above 25°C
250e
IB Po
Operating and Storage Ju.nction Temperature Range
THERMAL CHARACTERISTICS
TJ, Tstg
Characteristic
Thermal Res Istance, Junction to Case
- lndicates JEDEC Registered...
