Unknown Manufacturer 2SA1267
PNP Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(T a = 25 o C) Symbol Value 50 50 5 150 150 400 125 -55 to +125 Unit V V V mA mA mW O O Collector Base Voltage C ol l e ct o r Em i t t er V o lt a g e Emitter Base Voltage Collector Current Emitte r Cu rre nt Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO - IC IE Ptot Tj TS C C G S P FORM A IS AVAILABLE РАДИОТЕХ-ТРЕЙД ® Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ST 2SA1267 Characteristics at Tamb=25 oC Symbol DC Current Gain at -VCE=6V, -IC=2mA Current Gain Group O Y G Collector Cutoff Current at -VCB=50V -ICBO -IEBO -VCE(sat) fT NF COB 80 0.1 1 4 0.1 0.1 0.3 10 7 µA µA V MHz dB pF Emitter Cutoff Current at -VEB=5V Collector Emitter Saturation Voltage at -IC=100mA, -IB=10mA Transition Frequency at -VCE=10V, -IE=1mA Noise Figure at -VCE=6V, -IC=0.1V, f=1KHZ, RG=10kΩ Collector Output Capacitance at -VCB=10V, f=1MHz hFE hFE hFE 70 120 200 140 240 400 Min. Typ. Max. Unit G S P FORM A IS AVAILABLE SEMTE...