Datasheet Details
| Part number | 2SC1306 |
|---|---|
| Manufacturer | Unknown Manufacturer |
| File Size | 10.08 KB |
| Description | Silicon NPN Transistor |
| Datasheet | 2SC1306_ETC.pdf |
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Overview: 2SC1306 Silicon NPN Transistor Final RF Power Output.
| Part number | 2SC1306 |
|---|---|
| Manufacturer | Unknown Manufacturer |
| File Size | 10.08 KB |
| Description | Silicon NPN Transistor |
| Datasheet | 2SC1306_ETC.pdf |
|
|
|
: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.
WINTransceiver B C E Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC 3A Continuous Peak 5A Collector Power Dissipation (TA = +25°C), PD 1.2W Collector Power Dissipation (TC = +50°C), PD 10W Operating Junction Temperature, TJ +150°C Storage Temperature Range, Tstg -55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Power Output Collector Efficiency Symbol Test Conditions Min Typ Max Unit 80 75 5 25 25 4.0 60 0.9 10 10 200 V V MHz W % 1.2 V V V µA µA V(BR)CBO IC = 100µA, IB = 0 V(BR)EBO IE = 100µA, IC = 0 ICBO IEBO hFE VCB = 40V IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 0.5A Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm VCE(sat) IC = 1A, IB = 0.1A VBE(sat) IC = 1A, IB = 0.1A fT Cob PO VCE = 10V, IC = 0.1A VCB = 10V, f = 1MHz VCC = 12V, Pin = 0.2W, f = 27MHz 0.15 0.60 100 150 This document was created with Win2PDF available at http://www.daneprairie.com.
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