2SC1590 - Silicon NPN Transistor

Datasheet Summary

Features

High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz.

2SC1590 Silicon NPN Transistor by ETC - Datasheet Preview — Datasheet preview – 2SC1590

Datasheet Details

Part number	2SC1590
Manufacturer	ETC
File Size	8.27 KB
Description	Silicon NPN Transistor
Datasheet	2SC1590 Datasheet
Additional preview pages of the 2SC1590 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com 2SC1590 Silicon NPN Transistor RF Power Output The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications. WINTransceiver BEC Features: High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.

Published: Feb 23, 2009 |