2SK3752-01R - N-CHANNEL SILICON POWER MOSFET

Key Features

High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power.

2SK3752-01R n-channel silicon power mosfet by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	2SK3752-01R
Manufacturer	Unknown Manufacturer
File Size	145.13 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	2SK3752-01R Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SK375	N-Channel MOSFET	Hitachi Semiconductor
2SK3754	N-Channel MOSFET	Toshiba Semiconductor
2SK3755	N-Channel MOSFET Transistor	Inchange Semiconductor
2SK3755	SWITCHING N-CHANNEL POWER MOSFET	NEC
2SK3756	N-Channel MOSFET	Toshiba Semiconductor

Other Datasheets by Unknown Manufacturer

Part Number	Description
2SK3770-01MR	N-CHANNEL SILICON POWER MOSFET
2SK3771-01MR	N-CHANNEL SILICON POWER MOSFET
2SK3772-01	N-CHANNEL SILICON POWER MOSFET
2SK3773-01MR	N-CHANNEL SILICON POWER MOSFET
2SK3004	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com 2SK3752-01R FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive and Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Symbol Ratings V DS 500 ID ±16 ID(puls] ±64 VGS ±30 IAS 16 EAS dV DS/dt dV/dt PD 212.2 20 5 3.