Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
TRANSISTOR£¨PNP £©
TO¡ª 126
Features
Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current ICM : -3 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat)
1. EMITTER 2.COLLECTOR...