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3DG9014 - SILICON NPN TRANSISTOR

Key Features

  • High PC and hFE excellent hFE linearity, complementary pair with 9015(3CG9015). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 450 150 -55～150 V V V mA mW ℃ ℃ /Features characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob NF IC=0.1mA IE=0 IC=1.0mA IB=0 IE=0.1mA IC=0 VCB=50V IE=0 VEB=5.0V IC=0 VCE=5.0V IC=1.0mA IC=100mA IB=5.0mA IC=100mA IB=5.0mA VCE=5.

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Datasheet Details

Part number 3DG9014
Manufacturer Unknown Manufacturer
File Size 85.81 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 3DG9014 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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9014(3DG9014) NPN /SILICON NPN TRANSISTOR :、。 Purpose: Low frequency, low noise amplifier. :PC ,hFE , 9015(3CG9015)。 Features: High PC and hFE excellent hFE linearity, complementary pair with 9015(3CG9015). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 450 150 -55～150 V V V mA mW ℃ ℃ /Features characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob NF IC=0.1mA IE=0 IC=1.0mA IB=0 IE=0.1mA IC=0 VCB=50V IE=0 VEB=5.0V IC=0 VCE=5.0V IC=1.0mA IC=100mA IB=5.0mA IC=100mA IB=5.0mA VCE=5.0V IC=2.0mA VCE=5.0V IC=10mA VCB=10V IE=0 f=1.0MHz VCE=5.0V IC=0.2mA Rg=2.0K Ω f=1.0KΩ △f=200Hz A:60～150 50 45 5.0 0.05 0.05 1000 0.3 1.0 0.7 3.