4606 Datasheet N and P-Channel Enhancement Mode Power MOSFET

Manufacturer: Unknown Manufacturer

Datasheet Details

Part number	4606
Manufacturer	Unknown Manufacturer
File Size	3.60 MB
Description	N and P-Channel Enhancement Mode Power MOSFET
Datasheet	4606 Datasheet

The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

sales.Mr.wang13826508770 www.sztssd.com SOP-8 Plastic-Encapsulate MOSFETS 4606 N and P-Channel Enhancement Mode Power.

N-Channel VDS = 30V,ID =6.9A RDS(ON) < 21mΩ @ VGS=10V N-channel P-channel Only Schematic diagram RDS(ON) < 32mΩ @ VGS=4.5V.
P-Channel VDS = -30V,ID = -6.0A RDS(ON) < 45mΩ @ VGS=-10V RDS(ON) < 60mΩ @ VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired Use times Marking and pin assignment g.
Surface mount package SOP-8 top view shen Absolute Maximum Ratings (TA=25℃unless otherwise noted) ngParameter To Drain-Source Voltage Symbo.

Brand Logo	Part Number	Description	Manufacturer
	4606	Complementary High-Density MOSFET	Tuofeng Semiconductor

Part Number	Description