4606 Datasheet | Unknown Manufacturer

Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features - N-Channel VDS = 30V,ID =6.9A RDS(ON) < 21mΩ @ VGS=10V N-channel P-channel Only Schematic diagram RDS(ON) < 32mΩ @ VGS=4.5V - P-Channel VDS = -30V,ID = -6.0A RDS(ON) < 45mΩ @ VGS=-10V RDS(ON) < 60mΩ @ VGS=-4.5V - High power and current handing capability - Lead free product is acquired Use times Marking and pin assignment g - Surface mount package SOP-8 top view shen Absolute Maximum Ratings (TA=25℃unless otherwise noted) ng Parameter To Drain-Source Voltage Symbol N-Channel P-Channel -30 Unit Gate-Source Voltage For Continuous Drain Current TA=25℃ ±20 ±20 -6.0 Pulsed Drain Current (Note 1) -26 Maximum Power Dissipation TA=25℃ Operating Junction and Storage Temperature...