Datasheet Summary
IGBT
6th Gen. IGBT Module V-series
A pact design allows for greater power output
- High performance 6th gen. IGBT/FWD chipset
- Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly modules
- Easy assemblage, solder free options
- RoHS pliant Turn-on switching characteristics
- Improved noise-loss trade-off
- Reduced turn-on dv/dt, excellent turn-on dic/dt Turn-off switching characteristic
- Soft switching behavior, turn-off oscillation free
600V-100A (chip level)
V-IGBT Von=1.90V
25°C 25°C
Collector Current [A] http://..net/
125°C 75 125°C
U-IGBT Von=2.00V
0 0.0 0.5 1.0 1.5 2.0 2.5
On-state voltage drop [V]
U,U4 series 1200V 25A 35A 50A...
