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708SRAP-R-AU-01 - AlGaInP Red LED chip

Features

  • (1) High luminous intensity (2) Long operation life (3) 100% probing test (4) Low driving current.

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Datasheet Details

Part number 708SRAP-R-AU-01
Manufacturer ETC
File Size 68.11 KB
Description AlGaInP Red LED chip
Datasheet download datasheet 708SRAP-R-AU-01 Datasheet
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AlGaInP Red LED chip Features: (1) High luminous intensity (2) Long operation life (3) 100% probing test (4) Low driving current applications Characteristics: (1) Size Chip Size: 8 mil x 8 mil (203±25 µm x 203±25 µm) Chip Thickness: 7 mil (180±25µm ) typical Bonding Pad: 6 mil (152±10 µm) in diameter (2) Metallization: P electrode:Au pad N electrode:Au alloy (3) Structure: Refer to drawing Type: 708SRAP-R-AU-01 1.6 0.8 unit: mil 6 78 P-electrode AlGaInP epilayers n-GaAs sub. 7 N-electrode Electro-optical characteristics: Parameter Symbol Condition Min. Typ. Max. Unit Forward voltage Vf1 If = 10uA 1.25 Vf2 If = 6.3mA --- --2.0 --2.4 V V Reverse voltage Vr Ir =10uA 9 --- --- V Dominant wavelength(1) λ p If = 6.3mA 650 --- 685 nm Luminous intensity(2)(3) Po A If=6.
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