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AL808T1000 - 808nm High-Power Laser Diode

Key Features

  • Output power: 1w(CW) Variety of stripe width Efficient quantum well structure.

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Datasheet Details

Part number AL808T1000
Manufacturer Unknown Manufacturer
File Size 175.56 KB
Description 808nm High-Power Laser Diode
Datasheet download datasheet AL808T1000 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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808 nm High-Power Laser Diode (AL808T1000) Features: Output power: 1w(CW) Variety of stripe width Efficient quantum well structure Application: Solid-state laser pumping Medical usage Beacons and Illumination Free-space communication Infrared light sources Specifications: Parameter CW output power (mW) Peak wavelength (nm) Spectral width (nm) Threshold current (A) Operating current (mA) Operating voltage (V) Slope efficiency (W/A) Beam divergence θ⊥×θ∥ (deg.) Wavelength temperature coefficient (nm/℃) Emitting area (μm) Serial resistance (Ω) Lifetime(h) Package Value AL808T1000 1000 808±5 ≤5 ≤200 ≤1200 1.8~2.2 ≥0.9 12/40 0.3 100×1 ≤1.