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AOP604 - MOSFET

General Description

The AOP604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

A Schottky diode in parallel with the n-channel FET reduces body diode related losses.

Key Features

  • n-channel p-channel VDS (V) = 30V -30V ID = 7.5A -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = 10V) < 43m Ω < 58m Ω (VGS = 4.5V) Schottky VDS=30V, I F=3A, VF.

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Datasheet Details

Part number AOP604
Manufacturer Unknown Manufacturer
File Size 842.82 KB
Description MOSFET
Datasheet download datasheet AOP604 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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March 2003 AOP604 Complementary Enhancement Mode Field Effect Transistor General Description The AOP604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. Features n-channel p-channel VDS (V) = 30V -30V ID = 7.5A -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = 10V) < 43m Ω < 58m Ω (VGS = 4.5V) Schottky VDS=30V, I F=3A, VF<0.