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AS165-59 - GaAs IC High Isolation SPST Switch Positive Control

General Description

The AS165-59 SPST IC FET switch is absorptive on the input.

Key Features

  • Single Positive Control Voltage (0, +5 V).
  • Base Station Synthesizer Switch.
  • High Isolation (45 dB @ 0.9, 1.9 GHz).
  • J1 Port Non-Reflective.
  • Miniature Low Cost MSOP-8 Plastic Package PIN 1 MSOP-8 0.0256 (0.65 mm) TYP. PIN 1.

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Datasheet Details

Part number AS165-59
Manufacturer Unknown Manufacturer
File Size 438.16 KB
Description GaAs IC High Isolation SPST Switch Positive Control
Datasheet download datasheet AS165-59 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs IC High Isolation SPST Switch Positive Control 0.7–2.5 GHz AS165-59 Features ■ Single Positive Control Voltage (0, +5 V) ■ Base Station Synthesizer Switch ■ High Isolation (45 dB @ 0.9, 1.9 GHz) ■ J1 Port Non-Reflective ■ Miniature Low Cost MSOP-8 Plastic Package PIN 1 MSOP-8 0.0256 (0.65 mm) TYP. PIN 1 INDICATOR 0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ. 0.193 (4.90 mm) REF. 0.012 (0.30 mm) + 0.006 (0.15 mm) - 0.002 (0.05 mm) Description The AS165-59 SPST IC FET switch is absorptive on the input. The switch features high isolation and low insertion loss. Ideal building block for base station applications where synthesizer isolation is critical. Use in conjunction with the AS164-80 SPDT switch to meet GSM synthesizer switch isolation requirements. 7.0˚ 0.038 (0.95 mm) TYP. 0.030 (0.