ATV10GC Datasheet | Unknown Manufacturer

Features : - High sensitivity, -26.5d Bm typical - Integrated MEMS VOA extends overload beyond +10d Bm - Low capacitance high speed In Ga As APD photodetector - Supports FEC rates up to 10.709Gb/s - Best in class power consumption, only 350m W - Designed to exceed the environmental requirements of Telcordia GR-468-CORE - Ro HS 5/6 pliant Applications: - Client or line side links - DWDM TDM transponder applications Data Sheet Operating Characteristics Case Temperature = 25°C unless otherwise specified Parameter Optical sensitivity BOL [1] [2] Symbol Sens Measurement Conditions 231-1 PRBS BER<10-12 VAPD=VM10 231-1 PRBS BER<10-12 VAPD=VM10 T=-5 to +75°C DC - 6GHz Min Typ -26.5 Max -25.0 Unit d Bm Sensitivity penalty EOL over temperature [1] [2] 1.0 d B Deviation from linear phase High frequency -3d B corner Low frequency -3d B corner Transimpedance gain Return loss Optical overload [2] [3] [4] [5] -10 7 7.5 +10 ° GHz f H f L TZ VOUT S22 PSAT VAPD=VM10 Small signal Small signal Peak-to-peak DC to 7.0GHz 0d B Attenuation VAPD=VM3 BER<10-12 With VOA actuated T=25°C IAPD=10m A 40 1.1 1.6 600 -3 -1 2.3 700 -8 k Hz kΩ m V d B d Bm Maximum output voltage6 Optical overload extension APD breakdown voltage APD breakdown voltage temperature coefficient Dark current Amplifier bias current Input current for output limiting VOA maximum attenuation VOA control voltage VOA current VOA power dissipation (continuous) VOA response time [8] [7] +13 25 0.030 0.045 40 0.061 100 75 95 0.5 20 30 5.5 6 33 5 9 7.2 65 10 0.15 0.4 10 d Bm V V/°C n A m A m A d B V m A m W ms d B d B kΩ Vbr TVbr Id Icc IIn...