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B676 - SILICON POWER TRANSISTOR

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Description

With TO-220C package High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) DARLINGTON APPLICATIONS For switching applications Hammer drive, pulse motor drive applications Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector; connected to mounti

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Datasheet Details

Part number B676
Manufacturer ETC
File Size 124.87 KB
Description SILICON POWER TRANSISTOR
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    SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220C package ·High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.
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