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SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAILS BSS66 BSS67 BSS66R BSS67R M6 M7 M8 M9 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN.
40 60 6 50 0.20 0.30 0.65 20 35 50 30 15 40 70 100 60 30 250 300 4 8 Typ. 6 35 200 50 0.85 0.95
BSS66 BSS67
C B VALUE 60 40 6 200 100 50 330 -55 to +150 UNIT V V V mA mA mA mW °C E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL
V(BR)CBO V(BR)EBO ICES VCE(sat) VBE(sat) hFE
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).