Unknown Manufacturer BUZ900DP
N-CHANNEL POWER MOSFET
MECHANICAL DATA
Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIOAPPLICATIONS
FEATURES
1 2.0 2 3 2.0 1.0● HIGH SPEED SWITCHING
● N–CHANNEL POWER MOSFET
● SEMEFAB DESIGNED AND DIFFUSED
● HIGH VOLTAGE (160V & 200V)
● HIGH ENERGY RATING 1.2 0.6 2.8 3.4
● ENHANCEMENT MODE
● INTEGRAL PROTECTION DIODE
● P–CHANNEL ALSO AVAILABLE AS BUZ905DP & BUZ906DP
● DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE 5.45 5.45 TO–3PBL Pin 1 – Gate Pin 2 – Source Case is Source Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ900DP 160V 16A 16A 250W –55 to 150°C 150°C 0.5°C/W BUZ901DP 200V ±14V Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95 MAGNA TEC Ch...