C1306 - Silicon NPN Transistor

General Description

The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

📥 Download Datasheet

C1306 silicon npn transistor by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	C1306
Manufacturer	Unknown Manufacturer
File Size	9.34 KB
Description	Silicon NPN Transistor
Datasheet	C1306 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
C1300	PXO 9X14 J Leaded Surface Mount Package	Vectron International
C1301	4.5mm pitch wire to wire connector	CJT
C1308	Silicon NPN Transistor	SavantIC
C1309	Silicon NPN Transistor	SavantIC
C13-FR1	Power Inductors	Mitsumi Electronics

Other Datasheets by Unknown Manufacturer

Part Number	Description
C1327	Si NPN Epitaxial Planar Transistor
C1335	Silicon NPN Epitaxial Type Transistor
C1361	2SC1361
C1362	2SC1362

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SC1306 Silicon NPN Transistor Final RF Power Output Description: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. WINTransceiver BCE Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC Continuous 3A Peak 5A Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg 1.