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C2328 - Silicon NPN Transistor

General Description

The C2328 is designed for use in power amplifier applications and power switching applications

Key Features

  • Low collector saturation voltage.
  • Complementary to A1020 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 760um×760um 210±20um 160×170um 130×260um Al Au(As) 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Symbol Test Condition Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current G.

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Datasheet Details

Part number C2328
Manufacturer Unknown Manufacturer
File Size 223.56 KB
Description Silicon NPN Transistor
Datasheet download datasheet C2328 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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C2328 C2328 Silicon NPN Epitaxial Transistor Description: The C2328 is designed for use in power amplifier applications and power switching applications Features: ●Low collector saturation voltage ●Complementary to A1020 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 760um×760um 210±20um 160×170um 130×260um Al Au(As) 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Symbol Test Condition Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain ICBO IEBO BVCBO BVCEO BVEBO hFE VCB=30V, IE=0 VEB=5V, IC=0 IC=0.1mA IC=10mA IE=0.1mA VCE=2V, IC=0.