Datasheet Summary
C2328 Silicon NPN Epitaxial Transistor
Description: The C2328 is designed for use in power amplifier applications and power switching applications
Features
:
- Low collector saturation voltage
- plementary to A1020
Chip Appearance
Chip Size Chip Thickness
Bonding Pad Size
Front Metal Backside Metal Scribe line width Wafer Size
Base Emitter
760um×760um 210±20um 160×170um 130×260um Al Au(As) 60um 6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Symbol
Test Condition
Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain
ICBO IEBO BVCBO BVCEO BVEBO...
