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C4977 - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for

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Datasheet Details

Part number C4977
Manufacturer ETC
File Size 200.58 KB
Description Silicon NPN Power Transistor
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4977 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter.
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