CLT130W
CLT130W is NPN Silicon Phototransistors manufactured by Unknown Manufacturer.
features absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature -65°C to +200°C
- high sensitivity operating temperature -65°C to +150°C
- ± 35° acceptance angle (1)
- TO-18 hermetically sealed package lead soldering temperature 260°C collector-emitter voltage 30V
- transistor base is bonded (2) continuous collector current 50m A
- Ro HS pliant continuous power dissipation(3) 250m W description notes: The CLT130W, CLT131W and 1. 0.06” (1.5mm) from the header for 5 seconds maximum. CLT132W are silicon NPN planar 2. 200m A when pulsed at 1.0ms, 10% duty cycle. epitaxial phototransistors mounted in 3. Derate linearly 1.6m W/°C from 25°C free air temperature to TA = +150°C. TO-18 flat window packages. The wide acceptance angle provided by the flat window enables even reception over a relatively large area. For additional information, call Clairex electrical characteristics (TA = 25°C unless otherwise noted) symbol parameter Light current(4) IL ICEO V(BR)CEO V(BR)CBO V(BR)ECO VCE(sat) tr, tf θHP notes: min CLT130W CLT131W CLT132W 0.4 1.0 2.5 30 5.0 5.0
- typ 3.0 70 max 25 0.30
- units m A m A m A n A V V V V µs deg. test conditions VCE=5V, Ee=5.0m W/cm2 VCE=5V, Ee=5.0m W/cm2 VCE=5V, Ee=5.0m W/cm2 VCE=10V, Ee=0 IC=100µA, Ee=0 IC=100µA, Ee=0 IE=100µA, Ee=0 IC=0.4m A, Ee=5.0m W/cm2 VCC=5V, RL=1KΩ
Collector dark current Collector-emitter breakdown Collector-base breakdown Emitter-collector breakdown Collector-emitter saturation voltage Output rise and fall time(5) Total angle at half sensitivity points
4. Radiation source...
