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CPH6411 - N CHANNEL MOS SILICON TRANSISTOR

Datasheet Summary

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. Package Dimensions unit : mm 2151A [CPH6411] 2.9 6 54 0.15 0.05 0.2 0.6 1.6 0.6 2.8 12 3 0.95 0.4 0.7 0.2 0.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Specifications Absolute Maximum Ratings at Ta=25°C SANYO : CPH6 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature.

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Datasheet Details

Part number CPH6411
Manufacturer ETC
File Size 31.27 KB
Description N CHANNEL MOS SILICON TRANSISTOR
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Full PDF Text Transcription

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Ordering number : ENN7383 CPH6411 N-Channl Silicon MOSFET CPH6411 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Package Dimensions unit : mm 2151A [CPH6411] 2.9 6 54 0.15 0.05 0.2 0.6 1.6 0.6 2.8 12 3 0.95 0.4 0.7 0.2 0.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Specifications Absolute Maximum Ratings at Ta=25°C SANYO : CPH6 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Ratings 20 ±10 6 24 1.
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