Datasheet4U Logo Datasheet4U.com

CPH6411 - N CHANNEL MOS SILICON TRANSISTOR

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. Package Dimensions unit : mm 2151A [CPH6411] 2.9 6 54 0.15 0.05 0.2 0.6 1.6 0.6 2.8 12 3 0.95 0.4 0.7 0.2 0.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Specifications Absolute Maximum Ratings at Ta=25°C SANYO : CPH6 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature.

📥 Download Datasheet

Datasheet Details

Part number CPH6411
Manufacturer Unknown Manufacturer
File Size 31.27 KB
Description N CHANNEL MOS SILICON TRANSISTOR
Datasheet download datasheet CPH6411 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENN7383 CPH6411 N-Channl Silicon MOSFET CPH6411 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Package Dimensions unit : mm 2151A [CPH6411] 2.9 6 54 0.15 0.05 0.2 0.6 1.6 0.6 2.8 12 3 0.95 0.4 0.7 0.2 0.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Specifications Absolute Maximum Ratings at Ta=25°C SANYO : CPH6 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Ratings 20 ±10 6 24 1.