Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A
High DC Current Gain : hFE= 2000(Min) @ IC= 3A
Complement to Type 2SB1099
APPLICATIONS
Designed for audio frequency power amplifier and low speed switching industrial use.
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1590
DESCRIPTION ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A ·Complement to Type 2SB1099
APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous www.DataSheet4U.com ICP Collector Current-Pulse
w
ww
s c s .i
VALUE 150 V 100 V 7 V 8 A 12 A 0.8 A 2 W
UNIT
n c .
D1590 Datasheet
