E3055T Overview
plementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose SILICON EPITAXIAL PLANAR TRANSISTOR QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 70 60 10 75 1.2 2.0 UNIT V V A A W V V s VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value...