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E3055T - MJE3055T

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Description

Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose SILICON EPITAXIAL PLANAR TRANSISTOR QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 70 60 10 75 1.2 2.0 UNIT V V A A W V V s VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER Co

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Datasheet Details

Part number E3055T
Manufacturer ETC
File Size 91.95 KB
Description MJE3055T
Datasheet download datasheet E3055T Datasheet
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    www.DataSheet4U.com MJE3055T/MJE2955T GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose SILICON EPITAXIAL PLANAR TRANSISTOR QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 70 60 10 75 1.2 2.0 UNIT V V A A W V V s VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 4.0A; IB = 0.4A IF = 4.0A 1.
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