EESX1109 Datasheet | Unknown Manufacturer

EE-SX1107/1108/1109/1131 Ultra-pact Photomicrosensors with Surface-Mount Design Surface mount design, and tape and reel packaging facilitate automated PCB assembly s pact size makes these sensors ideal for use in applications with restricted space s High-resolution sensing with phototransistor output s s Dual channel model that is ideal for encoder applications (EE-SX1131) Ordering Information Appearance Sensing method Transmissive Slot width 1 mm Slot depth 2 mm Sensing object Opaque 0.15 x 0.6 mm min. Weight 0.05 g Part number EE-SX1107 2 mm 2.8 mm Opaque 0.3 x 1.0 mm min. 0.1 g EE-SX1108 3 mm 3.5 mm Opaque 0.5 x 1.0 mm min. 0.1 g EE-SX1109 Dual channel transmissive 2 mm 2.8 mm Opaque 0.3 x 1.0 mm min. 0.1 g EE-SX1131 EE-SX1107/1108/1109/1131 EE-SX1107/1108/1109/1131 Specifications s ABSOLUTE MAXIMUM RATING (TA=25°C) Item Emitter Forward current Pulse forward current Reverse voltage Detector Collector-emitter voltage Emitter-collector voltage Collector current Collector dissipation Ambient temperature Operating Storage Soldering (manual) Soldering (reflow) Symbol IF IFP VR VCEO VECO IC PC Topr Tstg Tsol Tsol Rated value 25 m A (see note) 100 m A (duty: 1/100, pulse width: 0.1 ms) 5V 20 V 5V 20 m A 75 m W (see note) -30° to 85°C -40° to 90°C 300°C (3 second max.) 240°C (10 second max) Note: Refer to Engineering Data if the ambient temperature is not within the normal room temperature range. s CHARACTERISTICS (TA=25°C) Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Dark current Peak spectral sensitivity wavelength bination Light current (collector-current) Collector-emitter saturation voltage Rising time Falling time Symbol VF IR λP(L) ID λP(P) IL VCE (sat) tr tf Value 1.1 V typ., 1.3 V max. 10 µA max. 940 nm typ. 100 n A max. 900 nm typ. 50 µA min., 150 µA typ., 500 µA max. 0.1 V typ., 0.4 V max. 10 µs typ. (see note) 10 µs typ. (see note) Condition IF = 5 m A VR = 5 V IF = 20 m A VCE = 10 V, 0 lx - IF = 5 m A, VCE =...