EFA025AL Datasheet | Unknown Manufacturer

Excelics DATA SHEET - - - - - - +20.0d Bm TYPICAL OUTPUT POWER 11.5d B TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 5m A PER BIN RANGE High Gain Ga As Power FET 420 50 104 48 260 50 78 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1d B G1d B PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added efficiency at 1d B pression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0m A -12 -7 17.0 9.5 Chip Thickness: 75 ± 13 microns All Dimensions In Microns TYP 20.0 20.0 11.5 9.0 38 UNIT d Bm d B % 20 30 45 50 -1.5 -15 -14 155 65 m A m S -2.5 V V V o Drain Breakdown Voltage Igd=1.0m A Source Breakdown Voltage Igs=1.0m A Thermal Resistance (Au-Sn Eutectic Attach) C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss Idss Ids Forward Gate Current 6m A 1m A Igsf Input Power 19d Bm @ 3d B pression Pin o Channel Temperature 175 C 150o C Tch o Storage Temperature -65/175 C -65/150o C Tstg Total Power Dissipation 880m W 730m W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: .excelics. DATA SHEET High Gain Ga As Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 Note: --- S11 --MAG ANG 0.990 -19.8 0.970 -38.4 0.927 -55.0 0.895 -69.0 0.862...