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Eudyna GaN-HEMT 90W
Preliminary
FEATURES
High Voltage Operation : VDS=50V High Gain: 15dB(typ.) at Pout=42dBm(Avg.) High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) Broad Frequency Range : 2100 to 2200MHz Proven Reliability
EGN21A090IV
High Voltage - High Power GaN-HEMT
DESCRIPTION
The EGN21A090IV is a 90 Watt GaN-HEMT that offers high efficiency, high gain, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation. This device is targeted for high voltage, low current operation in digitally modulated base station applications - ideally suited for W-CDMA base station amplifiers and other HPA designs while offering ease of use.