EPA060B-70 Datasheet | Unknown Manufacturer

Features - NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE - +26d Bm TYPICAL OUTPUT POWER - 9.0d B TYPICAL POWER GAIN AT 12 GHZ - 0.4 d B TYPICAL NOISE FIGURE AT 2GHz - 20 d B TYPICAL ASSOCIATED GAIN AT 2 GHz - 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE - Si3N4 PASSIVATION - ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY High Efficiency Heterojunction Power FET ' 0LQ $OO /HDGV - Applications - High Dynamic Range LNA - DC to 18 GHz All Dimensions In mils. ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1d B G1d B PAE IP3 NF GA Idss Gm Vp BVgd BVgs PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=2GHz Vds=6V, Ids=50% Idss f=12GHz Gain at 1d B pression f=2GHz Vds=6V, Ids=50% Idss f=12GHz Power Added Efficiency at 1d B pression f=2GHz Vds=6V, Ids=50% Idss f=12GHz +5d Bm POUT/Tone (5V/50m A) f=2GHz (5V/90m A) Noise Figure (5V/50m A) f=2GHz (5V/90m A) Associated Gain (5V/50m A) f=2GHz (5V/90m A) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=2.0m A -10 -6 MIN 24.0 17.0 7.0 TYP 26.0 25.5 19.0 9.0 55 45 28 31 0.4 0.6 20.0 20.0 180 190 -1.0 -15 -14 175 - o UNIT d Bm d B % d Bm d B d B 110 120 250 m A m S -2.5 V V V C/W Drain Breakdown Voltage Igd=1.0m A Source Breakdown Voltage Igs=1.0m A Thermal Resistance Rth - Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature ABSOLUTE1 10V -6V Idss 30m A 23d Bm 175o C -65/175 C o CONTINUOUS2 6V -3V 110m A 5m A @ 3d B pression 150 o C -65/150 o C 650m W Total Power Dissipation 780m W Pt Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone:...