EPA120E Datasheet | Unknown Manufacturer

Excelics DATA SHEET - - - - - - +29.5d Bm TYPICAL OUTPUT POWER 9.5d B TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 30m A PER BIN RANGE 830 50 116 D D D High Efficiency Heterojunction Power FET 48 320 95 45 80 Chip Thickness: 75 ± 13 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1d B G1d B PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1d B pression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=3.5m A -12 -7 MIN 28.0 10.0 TYP 29.5 29.5 12.0 9.5 46 210 240 360 380 -1.0 -15 -14 35 o UNIT d Bm d B % 510 m A m S -2.5 V V V C/W Drain Breakdown Voltage Igd=1.2m A Source Breakdown Voltage Igs=1.2m A Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 405m A Igsf Forward Gate Current 60m A 10m A Pin Input Power 27d Bm @3d B pression Tch Channel Temperature 175o C 150o C Tstg Storage Temperature -65/175o C -65/150o C Pt Total Power Dissipation 3.9W 3.2W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: .excelics. DATA SHEET High Efficiency Heterojunction Power FET S-PARAMETERS 8V, 1/2 Idss FREQ --- S11 ----- S21 ----- S12 ----- S22 --ANG -95.1 FREQ --- S11 ----- S21 ----- S12 ----- S22 --(GHz) MAG 1.0 0.898 ANG MAG ANG MAG ANG MAG...