EPA240D-SOT89 Datasheet | Unknown Manufacturer

Features - - - - - - - - LOW COST SURFACE-MOUNT PLASTIC PACKAGE +33d Bm TYPICAL OUTPUT POWER 14.0d B TYPICAL POWER GAIN AT 2GHz 0.4d B TYPICAL NOISE FIGURE AT 2GHz +40d Bm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY AND HIGH RELIABILITY DC-6GHz High Efficiency Heterojunction Power FET $ &# 6285&( '5$,1 - $7( Applications - - - Analog and Digital Wireless System High Dynamic Range LNA HPA (Top View) All Dimensions In Mils ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1d B G1d B PAE NF IP3 Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f = 2GHz Vds=8V, Ids=350m A Gain at 1d B pression f = 2GHz Vds=8V, Ids=350m A Power Added Efficiency at 1d B pression Vds=8V, Ids=350m A f = 2GHz Noise Figure f = 2GHz Vds=5V, Ids=150m A Vds=5V, Ids=350m A Output 3rd Order Intercept Point f = 2GHz Vds=5-8V, Ids=350m A Vds=5V, Ids=150m A Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=6m A -11 -7 MIN 31.5 12.0 TYP 33.0 14.0 55 0.4 0.8 40 38 720 760 -1.0 -15 -14 25- o UNIT d Bm d B % d B d Bm 940 -2.5 m A m S V V V C/W 440 480 Drain Breakdown Voltage Igd=2.4m A Source Breakdown Voltage Igs=2.4m A Thermal Resistance - Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 120m A 30d Bm 175o C -65/175o C 5.5 W 8V -3V 570m A 20m A @ 3d B pression 150o C -65/150o C 4.6 W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott...