EPA480C-SOT89 Datasheet | Unknown Manufacturer

Features - - - - - LOW COST SURFACE-MOUNT PLASTIC PACKAGE +36d Bm TYPICAL OUTPUT POWER 13.0d B TYPICAL POWER GAIN AT 2GHz 0.5d B TYPICAL NOISE FIGURE AT 2GHz +43d Bm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz - 0.4 X 4800 MICRON RECESSED “MUSHROOM” GATE - Si3N4 PASSIVATION - ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY AND HIGH RELIABILITY Applications - Analog and Digital Wireless System - High Dynamic Range LNA - HPA DC-6GHz High Efficiency Heterojunction Power FET $ &# 6285&( '5$,1 - $7( (Top View) All Dimensions In Mils ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1d B G1d B PAE NF PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f = 2GHz Vds=8V, Ids=750m A Gain at 1d B pression f = 2GHz Vds=8V, Ids=750m A Power Added Efficiency at 1d B pression Vds=8V, Ids=750m A f = 2GHz Noise Figure f = 2GHz Vds=5V, Ids=300m A Vds=5-8V, Ids=750m A Output 3rd Order Intercept Point f = 2GHz Vds=5-8V, Ids=750m A Vds=5V, Ids=300m A Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=14m A -11 -7 MIN 34.5 11.0 TYP 36.0 13.0 50 MAX UNIT d Bm d B % d B 0.5 1.2 43 41 1440 1560 -1.0 -15 -14 14- o IP3 Idss Gm Vp BVgd BVgs Rth d Bm 1880 m A m S -2.5 V V V C/W 880 960 Drain Breakdown Voltage Igd=4.8m A Source Breakdown Voltage Igs=4.8m A Thermal Resistance - Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 240m A 33d Bm 175o C -65/175o C 10 W 8V -3V 1.05A 40m A @ 3d B pression 150o C -65/150o C 8.4 W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908...