FC4B22180L - Gate resistor installed Dual N-channel MOS FET

Key Features

s y Low source-source ON resistance:Rss(on) typ. = 9.4 mΩ（VGS = 4.5 V) y CSP（Chip Size Package) y RoHS compliant (EU RoHS / MSL:Level 1 compliant).
Marking Symbol: 17.
Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard).
Absolute Maximum Ratings Ta = 25 °C Parameter Symbol Source-source Voltage VSS Gate-source Voltage Source Current Total Power Dissipation DC.
1 DC.
2 Pulse.
3 DC.
1 DC.
2 VGS IS1 IS2 ISp PD1 P.

FC4B22180L gate resistor installed dual n-channel mos fet by Unknown Manufacturer - Datasheet Preview

Datasheet Details

Part number	FC4B22180L
Manufacturer	Unknown Manufacturer
File Size	604.55 KB
Description	Gate resistor installed Dual N-channel MOS FET
Datasheet	FC4B22180L Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FC40SA50FK	HEXFET Power MOSFET	International Rectifier
FC4SD	Resistance Weld SMD Crystal	FOX
FC4T	Metal Foil Low Value Chip	OHMITE

Other Datasheets by Unknown Manufacturer

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FC4B22180L Gate resistor installed Dual N-channel MOS FET For lithium-ion secondary battery protection circuits FC4B22180L 1.74 4 3 Unit: mm 1.74 0.11 Features y Low source-source ON resistance:Rss(on) typ. = 9.4 mΩ（VGS = 4.5 V) y CSP（Chip Size Package) y RoHS compliant (EU RoHS / MSL:Level 1 compliant) Marking Symbol: 17 Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25 °C Parameter Symbol Source-source Voltage VSS Gate-source Voltage Source Current Total Power Dissipation DC *1 DC *2 Pulse *3 DC *1 DC *2 VGS IS1 IS2 ISp PD1 PD2 Channel Temperature Tch Storage Temperature Range Thermal Resistance (ch-a) DC *1 DC *2 Tstg Rth1 Rth2 Note *1 Mounted on FR4 board (25.4mm × 25.4mm × t1.