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FLM0910-12F
X-Band Internally Matched FET
FEATURES High Output Power: P1dB=40.5dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: ηadd=25%(Typ.) Broad Band: 9.5~10.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PTot Tstg Tch Rating 15 -5 57.