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SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS
ISSUE 3 AUGUST 1995 APPLICATIONS These devices are suitable for use in high speed, low current switching applications PARTMARKING DETAILS FMMT2369 - 1J FMMT2369R - 9R FMMTA2369A - P5 FMMTA2369AR - 9A
FMMT2369 FMMT2369A
C B SOT23 E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL SYMBOL VCBO VCES VCEO VEBO IC Ptot Tj:Tstg VALUE 40 40 15 4.5 200 330 -55 to +150 UNIT V V V V mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).